| Part |
Description |
| 5962-86710023A |
4-Bit Arithmetic Logic Unit |
| 5962-8671002JA |
4-Bit Arithmetic Logic Unit |
| 5962-8771002GA |
Low Power Dual Operational Amplifier |
| 5962-8771002PA |
Low Power Dual Operational Amplifier |
| 5962-8771002QXA |
Low Power Dual Operational Amplifier |
| 5962-8771002VGA |
Low Power Dual Operational Amplifier |
| 5962-8771002VPA |
Low Power Dual Operational Amplifier |
| 5962-9855002QXA |
PLLatinum 2.5 GHz Frequency Synthesizer for RF Personal Communications |
| 5962L8771002QGA |
Low Power Dual Operational Amplifier |
| 5962L8771002QPA |
Low Power Dual Operational Amplifier |
| 5962L8771002VGA |
Low Power Dual Operational Amplifier |
| 5962L8771002VPA |
Low Power Dual Operational Amplifier |
| DS0026CJ |
5 MHz Two Phase MOS Clock Driver |
| DS0026CJ-8 |
5 MHz Two Phase MOS Clock Driver |
| DS0026CL |
5 MHz Two Phase MOS Clock Driver |
| DS0026CN |
5 MHz Two Phase MOS Clock Driver |
| DS0026H |
5 MHz Two Phase MOS Clock Driver |
| DS0026H-MLS |
5 MHz Two Phase MOS Clock Driver |
| DS0026H-SMD |
5 MHz Two Phase MOS Clock Driver |
| DS0026H/883 |
5 MHz Two Phase MOS Clock Driver |
| DS0026J |
5 MHz Two Phase MOS Clock Driver |
| DS0026J-8 |
5 MHz Two Phase MOS Clock Driver |
| DS0026J-8-MLS |
5 MHz Two Phase MOS Clock Driver |
| DS0026J-MLS |
5 MHz Two Phase MOS Clock Driver |
| DS0026J-SMD |
5 MHz Two Phase MOS Clock Driver |
| DS0026J/883 |
5 MHz Two Phase MOS Clock Driver |
| JM38510/00205BC |
Dual Positive-Edge Triggered D Flip-Flop with Preset, Clear and Complementary
Outputs |
| JM38510/00205BD |
Dual Positive-Edge Triggered D Flip-Flop with Preset, Clear and Complementary
Outputs |
| JM38510/33002B2 |
Hex Inverter |
| JM38510/33002BC |
Hex Inverter |
| JM38510/33002BD |
Hex Inverter |
| JM38510/33002SC |
Hex Inverter |
| JM38510/33002SD |
Hex Inverter |
| JM38510/34002B2 |
Triple 3-Input AND Gate |
| JM38510/34002BC |
Triple 3-Input AND Gate |
| JM38510/34002BD |
Triple 3-Input AND Gate |
| JM38510/34002SC |
Triple 3-Input AND Gate |
| JM38510/34002SD |
Triple 3-Input AND Gate |
| JM38510/35002B2 |
Quad 2-Port Register |
| JM38510/35002BE |
Quad 2-Port Register |
| JM38510/75002BC |
Triple 3-Input NAND Gate |
| JM38510/75002BD |
Triple 3-Input NAND Gate |
| JM38510R75002B2 |
Triple 3-Input NAND Gate |
| JM38510R75002BC |
Triple 3-Input NAND Gate |
| JM38510R75002BD |
Triple 3-Input NAND Gate |
| JM38510R75002S2 |
Triple 3-Input NAND Gate |
| JM38510R75002SC |
Triple 3-Input NAND Gate |
| JM38510R75002SD |
Triple 3-Input NAND Gate |
| LM2002AT |
8 Watt audio power amplifier |
| LM2002T |
8 Watt audio power amplifier |
| NTE1002 |
Integrated circuit FM IF TV Amp |
| NTE15002 |
Integrated circuit. Color TV vertical deflection output circuit. |
| NTE16002 |
Silicon NPN transistor. RF power output, Po = 13.5W, 175MHz. |
| NTE16002-ECG |
Polymetric positive temperature coefficient (PTC) resettable fuse. |
| NTE5002A |
Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 2.7V,
Zener test current Izt = 20mA. |
| NTE6002 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse
voltage 1000V. Average forward current 40A. |
| NTE7002 |
Integrated circuit. Switched mode power supply control. |
| MSM534002E |
262,144-word x 16-bit or 524,288-word x 8 bit Mask ROM |
| MSM534002E |
262,144-word x 16-bit or 524,288-word x 8 bit Mask ROM |
| MSM534002E |
262,144-word x 16-bit or 524,288-word x 8 bit Mask ROM |
| MSM64P155L-002GS-BK |
4-bit microcontroller with-in LCD driver and melody circuit |
| OM4002ST |
15Amp schottky rectifier |
| OM5002ST |
15Amp ultra-fast rectifier |
| OM6002ST |
200V N-channel MOSFET |
| MC33348D-002 |
Lithium Battery Protection Circuit for One Cell Battery Packs |
| MC34002BP |
JFET Input Operational Amplifier |
| MC34002D |
JFET Input Operational Amplifier |
| MC34002DR2 |
JFET Input Operational Amplifier |
| MGS13002D |
Insulated Gate Bipolar Transistor N-Channel |
| MJ10020 |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter
Speedup Diode |
| MJ10021 |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter
Speedup Diode |
| MJ10023 |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter
Speedup Diode |
| MJ14002 |
High Current Complementary Silicon Power Transistors |
| MJ15002 |
Complementary Silicon Power Transistors |
| MJE16002 |
SWITCHMODE Series NPN Silicon Power Transistors |
| MJE18002 |
SWITCHMODE™ |
| MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter
Diode and Built-In Efficient Antisaturation Network |
| MJF18002 |
SWITCHMODE™ |
| OPI7002 |
Optically coupled isolator |
| OPR5002B |
Optical comparator array |
| DMC5002N |
0.3-7.0V 8.7mA LCD module |
| DMC5002NY-EB |
0.3-7.0V 9.0mA LCD module |
| DMC5002NY-EB-AAE |
0.3-7.0V 9.0mA LCD module |
| DMF5002N |
128 x 112dots;Dot size: 0.50 x 0.49mm; 0.3-7.0V; 1.0mA LCD module |
| DMF5002NY-EB |
128 x 112dots;Dot size: 0.50 x 0.49mm; 0.3-7.0V; 1.0mA LCD module |
| DMF5002NY-EB-AAE |
128 x 112dots;Dot size: 0.50 x 0.49mm; 0.3-7.0V; 1.0mA LCD module |
| 1N4002 |
Plastic silicon rectifier. Max recurrent peak reverse voltage 100 V. Max
average forward rectified current 1.0 A. |
| 1N4002S |
Plastic silicon rectifier. Max recurrent peak reverse voltage 100 V. Max
average forward rectified current 1.0 A. |
| 2N7002 |
N-channel enhancement mode field effect transistor. 60 Volts, 115 mAmp. |
| CM1002 |
High current silicon bridge rectifier. Max recurrent peak reverse voltage
200V. Max average forward current for resistive load 10A. Non-repetive peak
forward surge current at rated load 200A. |
| CM1002 |
High current silicon bridge rectifier. Max recurrent peak reverse voltage
200V. Max average forward current for resistive load 10A. Non-repetive peak
forward surge current at rated load 200A. |
| CM5002 |
High current silicon bridge rectifier. Max recurrent peak reverse voltage
200V. Max average forward current 50.0A |
| CP1002 |
Single-phase silicon bridge. Max recurrent peak reverse voltage 200V.
Max average rectified output 10.0A(at Tc=50), 3.0A(at Tc=100), 3.0(at Ta=50). |
| CP5002 |
High current silicon bridge rectifier. Max recurrent peak reverse voltage
200V. Max average forward current for resistive load at 55degC 50.0A. |
| ED1002CS |
DPAK surfase mount super fast recovery rectifier. Max recurrent peak reverse
voltage 200V. Max average forward rectified current (Tc=75degC) 10.0A. |
| ED1002CT |
Super fast recovery rectifier. Max recurrent peak reverse voltage 200V.
Max average forward rectified current (Tc=75degC) 10.0A. |
| ER1002 |
Superfast recovery rectifier. Max recurrent peak reverse voltage 200V.
Max average forward rectified (Tc=100degC) 10.0A. |
| ER1002CT |
Superfast recovery rectifier. Max recurrent peak reverse voltage 200V.
Max average forward rectified current (Tc=100degC) 10.0A. |
| ER1002F |
Superfast recovery rectifier. Max recurrent peak reverse voltage 200V.
Max average forward rectified (Tc=100degC) 10.0A. |
| ER1002FCT |
Isolation superfast recovery rectifier. Max recurrent peak reverse voltage
200V. Max average forward rectified current (Tc=100degC) 10.0A. |
| PG4002 |
Glass passivated junction plastic rectifier. Max recurrent peak reverse
voltage 100 A. Max average forward rectified current 0.375inches lead length
at 75degC 1.0 A.. |
| PG4002S |
Glass passivated junction plastic rectifier. Max recurrent peak reverse
voltage 100 A. Max average forward rectified current 0.375inches lead length
at Ta = 75degC 1.0 A.. |
| UF1002 |
Ultrafast switching rectifier. Max recurrent peak reverse voltage 200
V. Max average forward rectified current 10.0 A. |
| UF1002F |
Ultrafast switching rectifier. Max recurrent peak reverse voltage 200
V. Max average forward rectified current 10.0 A. |